Material SiliconGermaniumGaAsGaSbGaPInAsInSbInP

Diameter Any 12" 8" 6" 5" 4" 3" 2" 1"

Type Any n p SI

Dopant Any As B Cd Cr Fe Ga Ge P S S+Zn Sb Si Te Zn Intrinsic

Orientation Any 100 110 111 Other

Thick. [µm]

Surface Any DSP (P/P) SSP (P/E) as-Etched (E/E, RTP) as-Lapped (L/L) as-Cut (C/C) Polished/Grinded Back side oxide: present (SSP) Both sides oxide: present (SSP) Back side oxide: present (DSP) Broken

Resistivity [Ohm-cm]
-

TTV Any <10µm <9µm <8µm <7µm <6µm <5µm <4µm <3µm <2µm <1µm

Growth Any CZ FZ

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