Multi-Layer 3-5 Material EPI by MOCVD

The Institute for Electronic Materials Technology (ITME) in Warsaw, Poland is able to undertake the preparation of custom EPI layers (one or multi-layer structures) on any 3-5 materials and they actively seek such work. Please contact us for a quotation for a specific structure.

As an example of a routinely produced EPI wafer we quote:

  • Wafer: 2"Ř with InGaAs EPI on SI InP <100>, by MOCVD deposition
  • Substrate: Semi-Insulating InP (eg. InP:Fe),
    • Resistivity: > 1 x 10E7 Ohm cm, EDP < 1 x 10E4/cm2)
  • EPI: Lattice matched In/Ga alloy layer of n-type InGaAs
    • Nc > 2 x 10E18/cc (using Si as dopant)
    • Thickness: 0.5 um (+20%)

  • Price: $1,200.00 each (for 1 to 10 wafers),
  • Delivery: 5 weeks ARO

For more information contact EL-CAT Inc. at